I-United States yakha izinto ze-semiconductor ezine-conductivity ephezulu yokushisa ukuze icindezele ukushisisa kwe-chip.
Ngokukhula kwenani lama-transistors ku-chip, ukusebenza kwekhompuyutha kuyaqhubeka nokuba ngcono, kodwa ukuminyana okuphezulu nakho kukhiqiza izindawo eziningi ezishisayo.
Ngaphandle kobuchwepheshe obufanele bokuphatha okushisayo, ngaphezu kokunciphisa isivinini sokusebenza kweprosesa nokunciphisa ukwethembeka, kunezizathu zokuvimbela ukushisa ngokweqile futhi kudinga amandla engeziwe, ukudala izinkinga zokungasebenzi kahle kwamandla.Ukuze kuxazululwe le nkinga, iNyuvesi yaseCalifornia, eLos Angeles ithuthukise into entsha ye-semiconductor ene-thermal conductivity ephezulu kakhulu ngo-2018, eyakhiwe nge-boron arsenide engenasici ne-boron phosphide, efana nezinto ezikhona zokulahla ukushisa ezifana idayimane ne-silicon carbide.isilinganiso, nezikhathi ezingaphezu kuka-3 conductivity ezishisayo.
NgoJuni 2021, iNyuvesi yaseCalifornia, eLos Angeles, yasebenzisa izinto ezintsha ze-semiconductor ukuze zihlangane nama-chips ekhompyutha anamandla amakhulu ukucindezela ngempumelelo ukukhiqizwa kokushisa kwama-chips, ngaleyo ndlela kuthuthukiswe ukusebenza kwekhompyutha.Ithimba locwaningo lifake isemiconductor ye-boron arsenide phakathi kwe-chip kanye nesinki sokushisa njengenhlanganisela yosinki wokushisa kanye ne-chip ukuze kuthuthukiswe umphumela wokukhipha ukushisa, futhi lenza ucwaningo ngokusebenza kokuphathwa kokushisayo kwedivayisi yangempela.
Ngemva kokuhlanganisa i-boron arsenide substrate kugebe elibanzi lamandla e-gallium nitride semiconductor, kwaqinisekiswa ukuthi ukuqhutshwa kokushisa kwesixhumi esibonakalayo se-gallium nitride/boron arsenide kwakuphakeme njengo-250 MW/m2K, futhi isixhumi esibonakalayo ukumelana nokushisa kwafinyelela ezingeni elincane kakhulu.I-boron arsenide substrate iphinde ihlanganiswe ne-electron high mobility transistor chip ethuthukisiwe eyenziwe nge-aluminium gallium nitride/gallium nitride, futhi kuyaqinisekiswa ukuthi umphumela wokuqeda ukushisa ungcono kakhulu kunowedayimane noma i-silicon carbide.
Ithimba locwaningo lisebenzise i-chip ngomthamo omkhulu, laphinde lakala indawo eshisayo ukusuka kuzinga lokushisa legumbi ukuya ezingeni lokushisa eliphakeme kakhulu.Imiphumela yokuhlolwa ikhombisa ukuthi izinga lokushisa likasinki wokushisa wedayimane lingu-137°C, usinki wokushisa we-silicon carbide ungu-167°C, kanti usinki wokushisa we-boron arsenide ungu-87°C kuphela.I-thermal conductivity enhle kakhulu yalesi sikhombimsebenzisi ivela esakhiweni esiyingqayizivele se-phononic band ye-boron arsenide kanye nokuhlanganiswa kwesixhumi esibonakalayo.I-boron arsenide impahla ayinayo kuphela i-conductivity ephezulu yokushisa, kodwa futhi ine-interface encane yokumelana nokushisa.
Ingasetshenziswa njengesinki yokushisa ukuze kuzuzwe amandla aphezulu okusebenza kwedivayisi.Kulindeleke ukuthi isetshenziswe ekuxhumaneni okungenazintambo okude, okunomthamo omkhulu esikhathini esizayo.Ingasetshenziswa emkhakheni we-electronics power frequency high noma ukupakishwa kwe-elekthronikhi.
Isikhathi sokuthumela: Aug-08-2022